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Nell High Power Products. Complementary Silicon Power Transistor. TO-3P B. Low collector-emitter saturation voltage. Satisfactory linearity of foward current.
TO-3P package which can be installed. Collector - Emitter Saturation Voltage:. High Current Gain - Bandwidth product. Audio amplifier. General purpose switching and amplifier. All dimensions in millimeters. V CBO. V CEO. V EBO. T stg. Collector current. Base current. Collector power dissipation. Junction temperature.
Storage temperature. E Unclamped inductive load energy Note 1. Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:. Page 1 of 3. R th j-c. Maximum thermal resistance, junction to case. R th j-a. Maximum thermal resistance, junction to ambient. Off Characteristics. I CEO. Collector cutoff current. I EBO Emitter cutoff current.
I CES. On Characteristics. V CE sat Collector to emitter saturation voltage Note1. V BE sat. V BE on. Base to emitter saturation voltage Note1.
Base to emitter voltage Note1. Dynamic Characteristics. Note 1. Note 2. N ote 3. For PNP type voltage and current are negative. Page 2 of 3. Download TIP35 Datasheet. MIN 40 60 80 25 15 3.
TIP35 - NPN Power Transistor (100V 25A)