Data Sheet. Based on its featured performance, ATF is ideal for. Pin Connections and Package Marking. Noise Applications. Note: Top View. Package marking provides.
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All rights reserved. Assumes DC quiescent conditions. Figure 2. Figure 4. Gain 2 GHz, 4 V, 60 mA. Guaranteed at wafer probe level 2. Typical value determined from a sample size of parts from 9 wafers. Using production test board. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. Noise Figure vs. Associated Gain vs. OIP3 and P1dB vs.
Fmin vs. Current at 4 V. Frequency and Current at 4 V. Notes: 1. P1dB measurements are performed with passive biasing. Fmin and Ga vs. P1dB, IP3 vs. P1dB vs. Note: 1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated.
Refer to the noise parameter application section for more information. S and noise parameters are measured on a microstrip line made on 0. The output reference plane is at the end of the drain lead. Two 0. Losses as high as 0. For future improvements MDS for various specifications.
ATF-34143 HEMT. Datasheet pdf. Equivalent
Low Noise Pseudomorphic HEMT In A Surface Mount Plastic Package
Datasheet ATF-34143-TR1G - Avago Technologies MOSFET, RF, SOT-343
ATF-34143-TR1G PDF Datasheet浏览和下载